发明名称 THIN FILM TRANSISTOR SUBSTRATE OF HORIZONTAL ELECTRIC FIELD AND FABRICATING METHOD THEREOF
摘要 <p>A method of fabricating a liquid crystal display device includes in a first mask process, forming a first mask pattern group including a gate line, a gate electrode connected to the gate line and a common line parallel to the gate line that have a first conductive layer group structure having at least double conductive layers. A second mask process forms a gate insulating film on the first mask pattern group and a semiconductor pattern thereon. A third mask process forms a third mask pattern group including a data line, a source electrode connected to the data line and a drain electrode opposite the source electrode that have a second conductive layer group structure having at least double conductive layers, and a protective film interfacing with the third mask pattern group on the gate insulating film.</p>
申请公布号 KR101127822(B1) 申请公布日期 2012.03.26
申请号 KR20040112585 申请日期 2004.12.24
申请人 发明人
分类号 G02F1/136 主分类号 G02F1/136
代理机构 代理人
主权项
地址