| 摘要 |
According to embodiments, there is provided a semiconductor device, including: a logic circuit; an interlayer insulating film formed above the logic circuit; an amorphous silicon layer including: a non-silicide layer formed on the interlayer insulating film; and a silicide layer formed on the non-silicide layer; a TFT formed on the amorphous silicon layer; and a contact plug formed to plug a through hole penetrating the interlayer insulating film, the contact plug being electrically connected to the logic circuit, an upper part of the contact plug being connected to the silicide layer.
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