| 摘要 |
According to an embodiment, a semiconductor memory device includes a plurality of multi-level memory cells provided on a major surface of a semiconductor substrate of a first conductivity type. A first semiconductor region of a second conductivity type is selectively provided in the surface of the semiconductor substrate between the multi-level memory cells. A second semiconductor region is provided deeper than the first semiconductor region and includes a first conductivity type impurity. A plurality of binary memory cells are provided on the major surface of the semiconductor substrate, and a third semiconductor region of the second conductivity type is selectively provided in the surface of the semiconductor substrate between the binary memory cells. Amount of the first conductivity type impurity compensating a second conductivity type impurity of the first semiconductor region is larger than that of the third semiconductor region. |
