CURRENT CONTROL ELEMENT AND NONVOLATILE MEMORY ELEMENT USING SAME

摘要

A current control element (100) that is formed so as to cover the bottom opening (105) of a via hole (104) formed in an interlayer insulating layer (102) includes: a corrosion inhibiting layer (106) formed at the bottom of the bottom opening of the via hole so as to cover the entire bottom opening; a second electrode layer (108) formed below the corrosion inhibiting layer and made of a different material from the corrosion inhibiting layer; a current control layer (110) that is formed below and in physical contact with the second electrode layer; and a first electrode layer (112) that is formed below and in physical contact with the current control layer. The first electrode layer, the current control layer, and the second electrode layer constitute either an MSM diode or an MIM diode.