发明名称 MICROSTRUCTURE WITH AN ENHANCED ANCHOR
摘要 The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of a microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on the handle layer, and a silicon device layer formed on the buried oxide layer. A top oxide layer is formed on the device layer. The top oxide layer, the device layer, and the buried oxide layer are etched, thereby forming trenches to create an anchor and a microstructure device in the device layer. In process of fabricating the device, a thermal oxide layer is formed along sides of the microstructure device to enclose the microstructure device in the buried oxide layer, the top oxide layer and the thermal oxide layer. Then, a poly layer if formed to fill in the trenches and enclose the anchor. After the poly layer fills in the trenches, the oxide layers enclosing the microstructure device are etched away, releasing the microstructure device.
申请公布号 US2012068276(A1) 申请公布日期 2012.03.22
申请号 US20100887320 申请日期 2010.09.21
申请人 LIN CHUNG-HSIEN;CHU CHIA-HUA;CHENG CHUN-WEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN CHUNG-HSIEN;CHU CHIA-HUA;CHENG CHUN-WEN
分类号 H01L29/84;H01L21/02 主分类号 H01L29/84
代理机构 代理人
主权项
地址