| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce variations in transistor characteristics of an MOS transistor that is formed on an SOI substrate and has a mesa isolation structure. <P>SOLUTION: An MOS transistor comprises: a mesa SOI layer 5 formed on a buried oxide film 3; a gate oxide film 7 formed on a central portion of an upper surface of the mesa SOI layer 5; a first silicon oxide film 9 formed on an end portion of the upper surface of the mesa SOI layer 5 and having a thickness greater than that of the gate oxide film 7; a side wall film 13 that is formed on a side of the mesa SOI layer 5 with a second silicon oxide film 11 interposed therebetween, the side wall film 13 being composed of a silicon nitride film; and a gate electrode 15 formed on the gate oxide film 7. <P>COPYRIGHT: (C)2012,JPO&INPIT |
