发明名称 |
METHOD FOR FORMING GRAPHENE USING LASER BEAM, GRAPHENE SEMICONDUCTOR MANUFACTURED BY THE SAME, AND GRAPHENE TRANSISTOR HAVING GRAPHENE SEMICONDUCTOR |
摘要 |
A method for forming graphene includes introducing a substrate and a carbon-containing reactant source into a chamber, and radiating a laser beam onto the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source. A carbon-containing gas (methane) decomposes upon radiation of a laser beam. The carbon-containing gas has a decomposition rate on the order of femtoseconds and the laser beam has a pulse on the order of nanoseconds or more. The graphene is grown in a single layer along the surface of the substrate. Then, the graphene is selectively patterned using a laser beam to form a desired pattern.
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申请公布号 |
US2012068161(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113233553 |
申请日期 |
2011.09.15 |
申请人 |
LEE KEON-JAE;CHOI IN-SUNG;CHOI SUNG-YOOL;HONG BYUNG-HEE |
发明人 |
LEE KEON-JAE;CHOI IN-SUNG;CHOI SUNG-YOOL;HONG BYUNG-HEE |
分类号 |
H01L29/66;B01J19/12;B82Y30/00;B82Y40/00;H01L21/268 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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