发明名称 GAS SUPPLY MEMBER, PLASMA PROCESSING DEVICE, AND YTTRIA CONTAINING FILM FORMATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide protective film which, even when coating film is formed with a material containing highly plasma resistant yttria, can restrain the coating film from being degraded by shedding of or cracks in yttria particles. <P>SOLUTION: According to one embodiment of the present invention, a gas supply member 41 comprises a gas supply passage 42 comprised of a gas passage 421 having a first diameter and a discharge opening 422, connected to one end of the gas passage 421, which is disposed on a surface 41A on the gas flow downstream side of the gas supply member 41. At least part of the surface which constitutes the discharge opening 422 is composed of a curved plane. Also, the surface constituting the discharge opening 422 and the surface 41A on the downstream side of the gas supply member 41 include an yttria containing film 50 therein. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012060101(A) 申请公布日期 2012.03.22
申请号 JP20110060711 申请日期 2011.03.18
申请人 TOSHIBA CORP 发明人 ETO HIDEO;ITO SACHIYO;IKARIYAMA RIKYU;SAITO MAKOTO
分类号 H01L21/3065;C23C16/455 主分类号 H01L21/3065
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