| 摘要 |
1291031 Semi-conductor targets; image pick-up tubes TOKYO SHIBAURA ELECTRIC CO Ltd 5 Jan 1971 [16 Jan 1970 28 July 1970] 393/71 Headings H1D and H1K A vidicon has a target of the type shown wherein the high resistivity layer 4 consists of one or more cadmium compounds such as the sulphide, selenide or telluride and is 30-5000 Š thick. The semi-conductor body 1 is of N-type silicon with a surface layer 5 of enhanced conductivity. The P-type islands 2 are produced by boron diffusion and the insulating layer 3 may be the silica diffusion mask or may be a layer of silicon nitride or silicon monoxide. In a variant the high resistivity layer may be apertured to expose the island surfaces. (Similar structures may be used in image orthicons and tubes involving photomultiplication). The targets withstand heating during evacuation of the tube better than to those with high resistivity layers of antimony sulphide or selenide. |
