| 摘要 |
<p>PURPOSE: A photoresist composition, a coated substrate including a layer based on the composition, and a method for forming a photo-lithography pattern using the same are provided to improve pattern collapse margin and to reduce the loss of thicknesses in the process of treating photo-lithography. CONSTITUTION: A photoresist composition includes a first unit, copolymer, and a photoacid generator. The first unit is formed based on monomer containing a polymeric functional group and a first part represented by chemical formula I or chemical formula II. The copolymer contains one or more additional unit without an acid cutting group which is capable of forming a carboxylic acid group by cutting. In chemical formula I or chemical formula II, the R1 and the R2 are respectively C1 to C10 linear, branched, cyclic organic groups or are arbitrarily capable of forming a ring; one of the a and the b is 1; another of the a and the b is 1 or 2; the R3 and the R4 are respectively C1 to C10 linear, branched, and cyclic organic groups or are arbitrarily capable of forming a ring; one of the c and the d is 1; and another of the c and the d is 1 or 2.</p> |
