发明名称 METHODS OF FORMING THROUGH WAFER INTERCONNECTS IN SEMICONDUCTOR STRUCTURES USING SACRIFICIAL MATERIAL, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS
摘要 Methods of fabricating semiconductor structures include providing a sacrificial material within a via recess, forming a first portion of a through wafer interconnect in the semiconductor structure, and replacing the sacrificial material with conductive material to form a second portion of the through wafer interconnect. Semiconductor structures are formed by such methods. For example, a semiconductor structure may include a sacrificial material within a via recess, and a first portion of a through wafer interconnect that is aligned with the via recess. Semiconductor structures include through wafer interconnects comprising two or more portions having a boundary therebetween.
申请公布号 US2012061794(A1) 申请公布日期 2012.03.15
申请号 US20100879637 申请日期 2010.09.10
申请人 SADAKA MARIAM;S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 SADAKA MARIAM
分类号 H01L21/768;H01L21/30;H01L23/52 主分类号 H01L21/768
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