发明名称 |
METHODS OF FORMING THROUGH WAFER INTERCONNECTS IN SEMICONDUCTOR STRUCTURES USING SACRIFICIAL MATERIAL, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS |
摘要 |
Methods of fabricating semiconductor structures include providing a sacrificial material within a via recess, forming a first portion of a through wafer interconnect in the semiconductor structure, and replacing the sacrificial material with conductive material to form a second portion of the through wafer interconnect. Semiconductor structures are formed by such methods. For example, a semiconductor structure may include a sacrificial material within a via recess, and a first portion of a through wafer interconnect that is aligned with the via recess. Semiconductor structures include through wafer interconnects comprising two or more portions having a boundary therebetween.
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申请公布号 |
US2012061794(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US20100879637 |
申请日期 |
2010.09.10 |
申请人 |
SADAKA MARIAM;S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
SADAKA MARIAM |
分类号 |
H01L21/768;H01L21/30;H01L23/52 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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