METHOD OF 1/F NOISE LEVEL REDUCTION AND MANIPULATION IN SEMICONDUCTOR BASED DEVICES

摘要

The present invention provides, in one embodiment, a method of 1/f noise level reduction and manipulation for broad class of semiconductor based devices. The method comprises selection of constituent elements of a semiconductor based device in such a way to provide fast dynamics for the decay (damp) of a non-equilibrium state of dynamic equilibrium between interacting electrons and phonons systems in semiconductor media where electron signal is processed by a device.