| 摘要 |
The invention relates to a method for growing II-VI semiconductor crystals and II-VI semiconductor layers, and crystals and layers of the ternary or quaternary relatives thereof, from the liquid or gaseous phase. To this end, the solid initial materials are introduced into a growth chamber for growing crystals. Carbon monoxide is made available in the growth chamber as a reducing agent. The growth chamber is heated at least in regions to a temperature at which a phase transition of the first degree of the initial materials takes place, and the initial materials transition into the liquid or gaseous phase. The initial materials are then cooled, forming a semiconductor crystal or a semiconductor layer, wherein a phase transition of the first degree again takes place. The oxygen present in the growth chamber is bonded to the carbon monoxide and the formation of an oxide layer on the phase boundary of the growing semiconductor crystal or the semiconductor layer is thus prevented. |
