发明名称 |
Method and system for depositing a thin-film transistor |
摘要 |
<p>A method for forming a thin-film transistor gate insulating layer (100; 302) over a substrate (102) disposed in a processing chamber (104) is provided. The method includes: introducing a processing gas (116) for producing a plasma in the processing chamber (104); heating the substrate (102) to a substrate processing temperature of between 50 and 350° C; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate (102) by sputtering a target assembly (108) at a medium frequency.</p> |
申请公布号 |
EP2428994(A1) |
申请公布日期 |
2012.03.14 |
申请号 |
EP20100176247 |
申请日期 |
2010.09.10 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SCHEER, EVELYN;GRAW, OLIVER;WEBER, ROLAND;SCHREIBER, UDO |
分类号 |
H01L29/49 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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