发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
摘要 <p>PURPOSE: A semiconductor memory device and an operating method thereof are provided to extend a lifetime of a device by an updating process for storing a column address of a defective memory cell in a defective column address. CONSTITUTION: A memory array(110) includes a memory block and a CAM block for storing defective column address information. An operation circuit group executes a program loop of the CAM block or memory block. An error bit check circuit(190) respectively compares the number of error bits which does not coincide with input data with the number of correctable bits and the number of replacement determination bits. A control circuit(120) controls an operation circuit group to add a column address of the memory cell with an error bit to defective column address information stored in the CAM block if the number of error bits is between the number of the correctable bits and the number of the replacement determination bits.</p>
申请公布号 KR20120024256(A) 申请公布日期 2012.03.14
申请号 KR20100087053 申请日期 2010.09.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JUNG HWAN;PARK, SEONG JE
分类号 G11C29/18;G11C29/52 主分类号 G11C29/18
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