发明名称 |
Method for fabricating semiconductor substrates and semiconductor devices |
摘要 |
A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign substrate; and c) removing at least part of the semiconductor solid state material along the interface between the semiconductor layer and the foreign substrate. The removing step c) is preferably achieved by selective interfacial chemical etching. The semiconductor layer may be utilized as a substrate for fabrication of a wide variety of electronic and opto-electronic devices and integrated circuitry products. |
申请公布号 |
US8133803(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US20090489688 |
申请日期 |
2009.06.23 |
申请人 |
CHENG YUH-JEN;LO MING-HUA;KUO HAO-CHUNG;ACADEMIA SINICA |
发明人 |
CHENG YUH-JEN;LO MING-HUA;KUO HAO-CHUNG |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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