发明名称 |
Method of manufacturing semiconductor device and semiconductor device |
摘要 |
A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
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申请公布号 |
US8134171(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US201113105386 |
申请日期 |
2011.05.11 |
申请人 |
MIYAKE YASUTO;HIROYAMA RYOJI;HATA MASAYUKI;SANYO ELECTRIC CO., LTD. |
发明人 |
MIYAKE YASUTO;HIROYAMA RYOJI;HATA MASAYUKI |
分类号 |
H01L33/00;H01S5/323 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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