METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a microcrystalline semiconductor film and a semiconductor apparatus manufacturing method are provided to generate glow discharge plasma of a first microcrystalline semiconductor film and seed crystals with the same condition, thereby improving throughput. CONSTITUTION: A gate electrode is formed on a substrate(51). A gate insulating film(55) is arranged on the substrate and the gate electrode. Seed crystals(57) are formed on the gate insulating film. A first microcrystalline semiconductor film(59) is arranged on the seed crystals. A second microcrystalline semiconductor film(61) is arranged on the first microcrystalline semiconductor film.