发明名称 |
FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL |
摘要 |
The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate. |
申请公布号 |
US2012058621(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
US201113291468 |
申请日期 |
2011.11.08 |
申请人 |
LETERTRE FABRICE;GHYSELEN BRUNO;RAYSSAC OLIVIER;RAYSSAC PIERRE;RAYSSAC GISELE |
发明人 |
LETERTRE FABRICE;GHYSELEN BRUNO;RAYSSAC OLIVIER;RAYSSAC PIERRE;RAYSSAC GISELE |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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