发明名称 ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an electronic device having an insulation layer that can be formed at a temperature lower than conventional one. <P>SOLUTION: An electronic device includes (A) a control electrode 12, (B) a first electrode 14 and a second electrode 14, and (C) an active layer 16 including an organic semiconductor material layer 15 provided so as to be opposed to the control electrode 12 via an isolation layer 13, between the first electrode 14 and the second electrode 14. At least a part of the isolation layer 13 in contact with the active layer 16 comprises a layer formed by hardening a material represented by formula (1). <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012049225(A) 申请公布日期 2012.03.08
申请号 JP20100188103 申请日期 2010.08.25
申请人 SONY CORP 发明人 FUKUDA TOSHIO;KAWASHIMA NORIYUKI
分类号 H01L29/786;C08G59/20;H01L21/28;H01L21/283;H01L21/312;H01L21/336;H01L51/05;H01L51/30 主分类号 H01L29/786
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