| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method, as to a manufacturing method of a silicon-based thin film, capable of obtaining the thin film uniformly in low damage, high quality and large area. <P>SOLUTION: A manufacturing method of a silicon-based thin film includes placing a gas containing 0.01% or more and 1% or less of germanium in number of atoms relative to the number of silicon atoms in a silicon source gas used in manufacturing the silicon-based thin film simultaneously in same space. Preferably, the silicon-based thin film is amorphous. Also preferably, the source gas is decomposed by plasma discharge. <P>COPYRIGHT: (C)2012,JPO&INPIT |
