发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing voids occurring between a base such as a substrate and a semiconductor chip. <P>SOLUTION: A semiconductor device 100 comprises: a semiconductor chip 5 in which electrode pads 17 are formed on a first major surface 5a and an adhesive layer 3 is provided on a second major surface 5b; and a substrate 12 for mounting a semiconductor chip. A method of manufacturing the semiconductor device 100 comprises the steps of: applying a fillet-forming material 13a to a portion contacting the outer edges of the second major surface of the semiconductor chip on the surface of the substrate; and bonding the second major surface of the semiconductor chip to the substrate via the adhesive layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012049175(A) 申请公布日期 2012.03.08
申请号 JP20100187190 申请日期 2010.08.24
申请人 TOSHIBA CORP 发明人 KATAMURA YUKIO;TANE YASUO;YOSHIMURA ATSUSHI;IWAMI FUMIHIRO
分类号 H01L21/52;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/52
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