发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing voids occurring between a base such as a substrate and a semiconductor chip. <P>SOLUTION: A semiconductor device 100 comprises: a semiconductor chip 5 in which electrode pads 17 are formed on a first major surface 5a and an adhesive layer 3 is provided on a second major surface 5b; and a substrate 12 for mounting a semiconductor chip. A method of manufacturing the semiconductor device 100 comprises the steps of: applying a fillet-forming material 13a to a portion contacting the outer edges of the second major surface of the semiconductor chip on the surface of the substrate; and bonding the second major surface of the semiconductor chip to the substrate via the adhesive layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012049175(A) |
申请公布日期 |
2012.03.08 |
申请号 |
JP20100187190 |
申请日期 |
2010.08.24 |
申请人 |
TOSHIBA CORP |
发明人 |
KATAMURA YUKIO;TANE YASUO;YOSHIMURA ATSUSHI;IWAMI FUMIHIRO |
分类号 |
H01L21/52;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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