| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a hole having a high aspect ratio and reaching a contact part in a silicon oxide film, which enables a sufficient contact to be made between a contact material in the hole and the contact part. <P>SOLUTION: The method comprises: (Step 1) preparing a subject of processing which has, on a substrate, a first oxide film made of silicon oxide containing at least one of B and P, a second oxide film formed thereon and made of silicon oxide containing neither B nor P, and a contact part formed below an interface of the first and second oxide films; (Step 2) etching the second and first oxide films to form a hole reaching the contact part; and (Step 3) etching the first oxide film by a dry process using HF gas and inert gas to widen part of the hole in a region over the contact part of the first oxide film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
