| 摘要 |
<p>The present invention addresses the problem of providing an oxide sintered body for producing oxide semiconductor thin films that do not contain zinc (Zn), which interferes with film stability, or costly gallium (Ga). The present invention also addresses a separate problem of providing an oxide semiconductor thin film that has the same composition as the oxide sintered body. The oxide sintered body comprises indium (In), magnesium (Mg) a metal element X (where X represents at least one type of element selected from Al, Fe, Sn and Ti), and oxygen (O), and the atomic number ratios of indium (In), magnesium (Mg), and the metal element X satisfy 0.2 = [In]/[In + Mg + X] = 0.8, 0.1 = [Mg]/[In + Mg + X] = 0.5, and 0.1 = [X]/[In + Mg + X] = 0.5, respectively.</p> |
