| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the thermal stress generated in a semiconductor element or a die-bonding material without adjusting a physical characteristic value of its composition member, in a semiconductor device obtained by bonding the semiconductor element to a lead frame via the die-bonding material and encapsulating it in a mold resin. <P>SOLUTION: A thickness of a die-bonding material 13 for bonding a lead frame 11 and a semiconductor element 12 is set to be 40 μm or more, preferably 70 μm or more, or a thickness of the semiconductor element 12 is set to be 200 μm or less. Alternatively, the thickness of the die-bonding material 13 is set to be 40 μm or more, preferably 70 μm or more, and the thickness of the semiconductor element 12 is set to be 200 μm or less. By thickening the die-bonding material 13 or thinning the semiconductor element 12 in this way, the thermal stress generated in the semiconductor element 12 or the die-bonding material 13 can be suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
