| 摘要 |
PURPOSE: A light emitting device is provided to improve internal quantum efficiency by increasing the concentration of holes in a quantum well. CONSTITUTION: A first conductive semiconductor layer is formed on a substrate. An active layer of a multiple quantum well structure is formed on the first conductive semiconductor layer. A second conductive semiconductor layer is formed on the active layer. A quantum wall of the active layer is made of InGaN. An energy band gap of the quantum wall decreases from a direction of the first conductive semiconductor layer to a direction of the second conductive semiconductor layer. |
