NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A non-volatile memory apparatus is provided to reduce cell current scattering between active columns which are separated from common source lines with a second distance and active columns which are separated from the common source lines with a first distance by a first conductivity type low density doping process of a central region. CONSTITUTION: Second conductivity type common source lines are arranged on a first conductivity type substrate. A substrate channel region is arranged on a substrate between the common source lines. The substrate channel region comprises a central region between peripheral regions and the peripheral regions(111) which are directly adjacent to the common source lines. A plurality of vertical channels is vertically provided from a substrate channel region(110). The peripheral regions have impurity doping concentration which is different from the central region.