Semiconductor light emitting device

摘要

A light emitting device is disclosed, which comprises:
a reflective electrode (530);
a semiconductor layer (510) over the reflective electrode, the semiconductor layer comprising a p-type semiconductor layer (513) disposed on the reflective electrode (530), a light emitting layer (512) disposed on the p-type semiconductor layer (513), and an n-type semiconductor layer (511) disposed on the light emitting layer (512); and
a photonic crystal (520) disposed on the semiconductor layer (510), the photonic crystal (520) having an etching depth of »/n or more, where "»" represents a wavelength of light emitted from the light emitting layer (512) and "n" represents a refractive index of the semiconductor layer (510),
wherein a distance (d) between the reflective electrode (530) and a center of the light emitting layer (512) is within the ranges represented by 0.65 »/n to 0.85 »/n or an odd multiple of »/(4n).