METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A nonvolatile memory device is provided to improve the mechanical intensity of an insulation layer at each layer by forming the insulation layer with a net structure. CONSTITUTION: A semiconductor substrate(100) is made of single crystal semiconductor materials. A common source line(117) electrically connected to a source is formed on the semiconductor substrate. A filler shaped semiconductor pattern is formed on the semiconductor substrate. A memory cell string includes a gate group(142) comprising cell transistors. A charge storage film group is located between the gate group and the semiconductor pattern.