SEMICONDUCTOR PHOTO DEVICE STRUCTURE HAVING ELECTRON CONSUMPTION LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor photo device structure having an electron consumption layer and a manufacturing method thereof are provided to improve quantum efficiency by inserting an electron consumption layer and reducing electronics overflow. CONSTITUTION: A template layer(220) is formed on a substrate(210). A light emission diode layer(230) is formed on the template layer. The light emission diode layer comprises an N type GaN layer(231), a multiple quantum well(232), an Mid-P layer(233), and an electronics depletion layer(234). An ECL restricts the electronics gain and increase the recombination of electron-hole. A P-type nitride semiconductor layer(235) is formed on the ECL.