| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon epitaxial wafer with fewer surface defects, excellent layer thickness uniformity of a silicon single-crystal epitaxial layer, and excellent haze level even at a small inclination angle from ä110} plane. <P>SOLUTION: A manufacturing method of a silicon epitaxial wafer for vapor phase growth of a silicon single-crystal epitaxial layer on a main surface of a silicon single-crystal substrate comprises a vapor phase growth step of performing vapor phase growth while the silicon single-crystal substrate has a main surface with ä110} plane or with an off-angle of less than 0.5 degrees from the ä110} plane, and the silicon single-crystal substrate temperature is set at 1170-1190°C. <P>COPYRIGHT: (C)2012,JPO&INPIT |
