发明名称 |
High Voltage Semiconductor Devices |
摘要 |
In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.
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申请公布号 |
US2012049279(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US20100868434 |
申请日期 |
2010.08.25 |
申请人 |
SHRIVASTAVA MAYANK;BAGHINI MARYAM SHOJAEI;RUSS CORNELIUS CHRISTIAN;GOSSNER HARALD;RAO RAMGOPAL |
发明人 |
SHRIVASTAVA MAYANK;BAGHINI MARYAM SHOJAEI;RUSS CORNELIUS CHRISTIAN;GOSSNER HARALD;RAO RAMGOPAL |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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