发明名称 |
TRANSISTORS HAVING A CONTROL GATE AND ONE OR MORE CONDUCTIVE STRUCTURES |
摘要 |
Transistors having a dielectric over a semiconductor, a control gate over the dielectric at a particular level, and one or more conductive structures over the dielectric at the particular level facilitate control of device characteristics of the transistor. The one or more conductive structures are between the control gate and at least one source/drain region of the transistor. The one or more conductive structures are electrically isolated from the control gate. |
申请公布号 |
US2012049248(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US20100872814 |
申请日期 |
2010.08.31 |
申请人 |
SMITH MIKE;FULFORD HENRY JIM;MICRON TECHNOLOGY, INC. |
发明人 |
SMITH MIKE;FULFORD HENRY JIM |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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