发明名称 TRANSISTORS HAVING A CONTROL GATE AND ONE OR MORE CONDUCTIVE STRUCTURES
摘要 Transistors having a dielectric over a semiconductor, a control gate over the dielectric at a particular level, and one or more conductive structures over the dielectric at the particular level facilitate control of device characteristics of the transistor. The one or more conductive structures are between the control gate and at least one source/drain region of the transistor. The one or more conductive structures are electrically isolated from the control gate.
申请公布号 US2012049248(A1) 申请公布日期 2012.03.01
申请号 US20100872814 申请日期 2010.08.31
申请人 SMITH MIKE;FULFORD HENRY JIM;MICRON TECHNOLOGY, INC. 发明人 SMITH MIKE;FULFORD HENRY JIM
分类号 H01L29/78 主分类号 H01L29/78
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