Methods of forming alpha and beta tantalum films with controlled and new microstructures

摘要

The present invention relates to a tantalum film and a method of forming the same, wherein the tantalum film has an amorphous microstructure characterized by a diffuse x-ray diffraction peak at 2¸= 30-35° and a diffuse ring in the electron diffraction pattern, wherein the tantalum film preferably has no grain boundaries.