Method of manufacturing a semiconductor device having an electrode exposed through a hole

摘要

A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first insulating film is formed over a substrate. A second insulating film is formed on the first insulating film. An electrode penetrating the first and the second insulating films is formed. A part of the second insulating film and a part of the electrode are removed so that a first hole is formed in the second insulating film. A first portion of the electrode is exposed through the first hole. A part of the first portion of the electrode is removed by an isotropic etching.