TRANSISTORS HAVING BURIED N-TYPE AND P-TYPE REGIONS BENEATH THE SOURCE REGION AND METHODS OF FABRICATING THE SAME,申请号KR20077015942-传众专利搜索

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发明名称	TRANSISTORS HAVING BURIED N-TYPE AND P-TYPE REGIONS BENEATH THE SOURCE REGION AND METHODS OF FABRICATING THE SAME
摘要
申请公布号	KR101121600(B1)	申请公布日期	2012.02.28
申请号	KR20077015942	申请日期	2005.10.04
申请人		发明人
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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