发明名称 |
Process for producing silicon |
摘要 |
A process for producing silicon comprises the steps of a reduction step [1] of depositing silicon by reacting chlorosilanes and hydrogen in a reactor under heat and discharging an exhaust gas that contains hydrogen, oligomers of silanes, and a silicon powder; a carrying step [2] of carrying the exhaust gas that has been exhausted in the step [1] while keeping a temperature of the exhaust gas at not less than 105° C.; a removal step [3] of supplying the exhaust gas that has been carried in the step [2] to a filter at a temperature of not less than 105° C. and discharging the exhaust gas from the filter at a temperature of not less than 105° C. to remove the silicon powder from the exhaust gas and give a mixed gas that contains the hydrogen and the oligomers of silanes; and a separation step [4] of cooling the mixed gas that has been obtained in the step [3] to separate the hydrogen as a gas phase from the mixed gas. |
申请公布号 |
US8124041(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20090937912 |
申请日期 |
2009.04.16 |
申请人 |
SAKIDA MANABU;WAKAMATSU SATORU;TOKUYAMA CORPORATION |
发明人 |
SAKIDA MANABU;WAKAMATSU SATORU |
分类号 |
C01B33/02 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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