发明名称 Process for producing silicon
摘要 A process for producing silicon comprises the steps of a reduction step [1] of depositing silicon by reacting chlorosilanes and hydrogen in a reactor under heat and discharging an exhaust gas that contains hydrogen, oligomers of silanes, and a silicon powder; a carrying step [2] of carrying the exhaust gas that has been exhausted in the step [1] while keeping a temperature of the exhaust gas at not less than 105° C.; a removal step [3] of supplying the exhaust gas that has been carried in the step [2] to a filter at a temperature of not less than 105° C. and discharging the exhaust gas from the filter at a temperature of not less than 105° C. to remove the silicon powder from the exhaust gas and give a mixed gas that contains the hydrogen and the oligomers of silanes; and a separation step [4] of cooling the mixed gas that has been obtained in the step [3] to separate the hydrogen as a gas phase from the mixed gas.
申请公布号 US8124041(B2) 申请公布日期 2012.02.28
申请号 US20090937912 申请日期 2009.04.16
申请人 SAKIDA MANABU;WAKAMATSU SATORU;TOKUYAMA CORPORATION 发明人 SAKIDA MANABU;WAKAMATSU SATORU
分类号 C01B33/02 主分类号 C01B33/02
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