发明名称 |
Polycrystalline silicon layer, flat panel display using the same, and method of fabricating the same |
摘要 |
A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and a method of fabricating the same are provided. The polycrystalline silicon layer is formed by crystallizing a seed region of an amorphous silicon layer using a super grain silicon (SGS) crystallization technique. The crystallinity of the seed region spread into a crystallization region beyond the seed region. The crystallization region is formed into a semiconductor layer that can be incorporated to make a thin film transistor to drive flat panel displays. The semiconductor layer made by the method of the present invention provides uniform growth of grain boundaries, and characteristics of a thin film transistor made of the semiconductor layer are improved. |
申请公布号 |
US8125033(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20060636962 |
申请日期 |
2006.12.12 |
申请人 |
YANG TAE-HOON;LEE KI-YONG;SEO JIN-WOOK;PARK BYOUNG-KEON;SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
YANG TAE-HOON;LEE KI-YONG;SEO JIN-WOOK;PARK BYOUNG-KEON |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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