发明名称 |
High-speed electronic circuit having a cascode configuration |
摘要 |
A high speed electronic circuit has a cascode circuit configuration and is provided with a bias current source (CS0) between an emitter and a base of a load transistor (Q) in the cascode circuit configuration for compensating a base-emitter voltage (VBE) of the transistor to eliminate an adverse effect of charging and discharging at a stray capacitor (C) which can be connected between the base and the emitter of the transistor. The high speed electronic circuit can be applied to an; circuit, a level shift circuit, a level shift discrimination circuit, a signal distribution circuit, a signal synthesization circuit and a frequency band control circuit.
|
申请公布号 |
US5510745(A) |
申请公布日期 |
1996.04.23 |
申请号 |
US19930170997 |
申请日期 |
1993.12.21 |
申请人 |
FUJITSU LIMITED |
发明人 |
HAMANO, HIROSHI;AMEMIYA, IZUMI;YAMAMOTO, TAKUJI;KITASAGAMI, HIROO;IHARA, TAKESHI |
分类号 |
H03F1/22;H03F3/45;H03K5/15;H03K19/018;(IPC1-7):H03K19/082 |
主分类号 |
H03F1/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|