发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the problem of corrosion resistance such as migration or corrosion, the problem of bondability caused by shortage of pressure and heating, and junction reliability in repeated stress during operation are improved, in the lead-free solder junction of a power transistor and a substrate. <P>SOLUTION: In a semiconductor device, a surface treatment portion of an uneven shape is provided on a primary surface of a substrate 15, and a solder joint layer 17 is formed on the surface treatment portion. A mounting board of semiconductor packaging components is bonded to the substrate 15 via the solder joint layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012039008(A) 申请公布日期 2012.02.23
申请号 JP20100179628 申请日期 2010.08.10
申请人 TOSHIBA CORP 发明人 KURI YUUJI;TAKENAKA HIROSHI;KOTANI KAZUYA;TAKEDA RYO;YASUOKA IKUO;MATSUMURA HITOTSUGU;TODO YOKO;SEKIYA HIRONORI
分类号 H01L23/36;H01L23/40;H01L25/07;H01L25/18;H01L29/78;H05K3/34 主分类号 H01L23/36
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