| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device. <P>SOLUTION: A silicon nitride film (a first insulating film) 5 is formed so as to cover a plurality of gate electrodes 3b, and then an ozone tetraethylorthosilicate (TEOS) film (a first silicon oxide film) 6 and a plasma TEOS film (a second silicon oxide film) are laminated in order. After laminating the ozone TEOS film 6, the ozone TEOS film is polished by the CMP method using the silicon nitride film 5 as a CMP stopper film before laminating the plasma TEOS film. Therefore, uniform film thickness of the plasma TEOS film is obtained, and the reliability of a semiconductor device can be improved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
