| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure capable of sufficiently increasing gate breakdown voltage, even in the semiconductor device in which a number of transistor cells having a trench structure are formed in a matrix shape, and gate wiring composed of a metal film is in contact with the gate electrodes of the transistors. <P>SOLUTION: A semiconductor device comprises a cell region 10 in which transistor cells are arranged in a matrix shape. Each transistor cell has a trench structure in which recessed grooves 11 are formed in a semiconductor layer 1, a gate insulating film 4 is formed in the recessed grooves 11, and gate electrodes 5 composed of, for example, polysilicon are provided in the narrow groves 11. In order to contact a gate wiring 9 composed of a metal film, a gate pad 5a, which is successively provided with the gate electrodes 5, is formed in a recessed part 12 simultaneously provided with the recessed grooves 11. <P>COPYRIGHT: (C)2012,JPO&INPIT |
