发明名称 Transistor and process of producing the same, light-emitting device, and display
摘要 A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device comprising the transistor, and a display comprising the transistor. The transistor comprises an emitter electrode and a collector electrode. Between the emitter electrode and the collector electrode are situated a semiconductor layer and a sheet base electrode. It is preferred that the semiconductor layer be situated between the emitter electrode and the base electrode and also between the collector electrode and the base electrode to constitute a second semiconductor layer and a first semiconductor layer, respectively. It is also preferred that the thickness of the base electrode be 80 nm or less. Furthermore, a dark current suppressor layer is situated at least between the emitter electrode and the base electrode, or between the collector electrode and the base electrode.
申请公布号 US8120242(B2) 申请公布日期 2012.02.21
申请号 US20070293649 申请日期 2007.03.22
申请人 YOKOYAMA MASAAKI;NAKAYAMA KENICHI;OSAKA UNIVERSITY;SUMITOMO CHEMICAL COMPANY, LTD.;DAI NIPPON PRINTING CO., LTD.;RICOH COMPANY, LTD. 发明人 YOKOYAMA MASAAKI;NAKAYAMA KENICHI
分类号 H01L51/52 主分类号 H01L51/52
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