| 摘要 |
A thin-film transistor array substrate includes a source line that is formed above a gate insulating layer covering a gate line, a semiconductor layer that is formed on the gate insulating layer and placed in a substantially whole area below a drain electrode, in a substantially whole area below a source electrode, in a substantially whole area below the source line and in a position opposite to the gate electrode, a pixel electrode that is formed directly on the drain electrode, a transparent conductive pattern that is formed directly on the source electrode and the source line in the same layer as the pixel electrode, and a counter electrode that is formed on an interlayer insulating layer covering the pixel electrode and the transparent conductive pattern and generates a fringe electric field with the pixel electrode. |
