发明名称 METHOD OF MANUFACTURING PIEZOELECTRIC DEVICE AND PIEZOELECTRIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a piezoelectric device, capable of mass production without containing unneeded gas or moisture inside the piezoelectric device. <P>SOLUTION: The method of manufacturing the piezoelectric device includes: a process (S10) of preparing a piezoelectric wafer which includes a plurality of piezoelectric frames and has a pair of first through-holes formed therein; a process (S11) of preparing a base wafer which includes a plurality of bases each having a first surface and a second surface on the opposite side of the first surface and has a pair of second through-holes formed therein; a process (S12) of preparing a lid wafer including a plurality of lids; a sealing material disposing process (S131) of disposing a sealing material (SL) between one main surface of an outer frame and the second surface of the base wafer and between the other main surface of the outer frame and the lid wafer; and a bonding process (S141) of bonding the piezoelectric wafer, the base wafer and the lid wafer. Then, in the bonding process, ventilation is performed from a communication groove (120) communicated with the first through-holes or the second through-holes and the communication groove is sealed with the sealing material (SL) thereafter. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012034086(A) 申请公布日期 2012.02.16
申请号 JP20100170446 申请日期 2010.07.29
申请人 NIPPON DEMPA KOGYO CO LTD 发明人 MORITA KUNIO
分类号 H03H3/02;H01L23/02;H01L23/08;H03H9/02 主分类号 H03H3/02
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