| 摘要 |
PURPOSE: To provide a charged particle beam exposure system of a low aberration and a small size, without being affected by the space/charge effect. CONSTITUTION: An aperture-type charged beam exposure system 10 for drawing a desired pattern by generating a charged beam 8 of a low acceleration from an electron gun 11, and illuminating a wafer 14 comprises a step and repeat optical system for forming a multi-pole lens field for reducing the beam 8 at substantially the same reduction ratio in directions X and Y, when an optical axis of the beam 8 is in a direction Z and, to image an electron beam on the wafer 14 without connecting a crossover at all between a second molding aperture 19 and the wafer 14.
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