发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed on the first active region and including a first electrode pattern, and a Metal Oxide Silicon (MOS) capacitor disposed on the second active region and including a second electrode pattern, and in which the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region. |
申请公布号 |
US2012037971(A1) |
申请公布日期 |
2012.02.16 |
申请号 |
US201113181700 |
申请日期 |
2011.07.13 |
申请人 |
KWON OH-KYUM;LEE TAE-JUNG;UHN KYOUNG-EUN;KIM BYUNG-SUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON OH-KYUM;LEE TAE-JUNG;UHN KYOUNG-EUN;KIM BYUNG-SUN |
分类号 |
H01L29/78;H01L27/06;H01L29/94 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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