| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve metalization in a via hole formed in a substrate. <P>SOLUTION: A method of manufacturing a semiconductor device having a substrate 10 made of SiC, includes a step of etching a rear face of the substrate 10 using an etching gas containing fluorocarbon and a mask 14 to form a via hole 20 penetrating from a front face to the rear face of the substrate 10. The step of forming the via hole 20 is a step of forming a taper shape whose opening cross-section area gradually reduces from the rear face toward the front face of the substrate 10. Etching requirements are: inclusion of dry etching of an inductive coupling plasma system; a gas flow rate of fluorocarbon of 10-200 sccm; a gas pressure Press of 0.1-10.0 Pa; an inductive coupling plasma power ICP of 100-5000 W; and a bias power Bias of 10-1000 W. <P>COPYRIGHT: (C)2012,JPO&INPIT |
