| 摘要 |
PROBLEM TO BE SOLVED: To reduce the generation of a defect of a pattern in a coating development treatment system to form a pattern on a wafer. SOLUTION: In the coating development treatment system 1, a wafer U for inspection is treated periodically and a pattern is formed on the wafer U. The line width of the pattern on the wafer U is measured by a line measuring unit 20 in an inspecting station 3 and the result of the measurement is accumulated in an accumulating unit 160. A control unit 161 extracts the aging trend of the line width of the pattern formed by the coating development treatment system 1 on the basis of measuring information accumulated in the accumulating unit 160. Moreover, the control unit 161 changes settings of the exposing conditions of the exposure unit 5 to provide the constant line width of the wafer treated later by the coating development treatment system based on the trend of the line width. As a result, the generation of a defect in relation to the line width of a pattern in the coating development treatment system 1 can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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