ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR HIGH SPEED TECHNOLOGIES WITH MIXED AND ULTRA-LOW VOLTAGE SUPPLIES

摘要

A semiconductor integrated circuit (IC) is provided with an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a pad (102) connected to a first voltage source of a protected circuit node of the IC, and a silicon controlled rectifier (SCR) (106) having an anode coupled to the first voltage source, and the cathode coupled to a second voltage source. Capacitive turn-on devices are coupled between a first gate of the SCR and the first voltage source and a second gate of the SCR and the second voltage source.